Characterization of metal-ferroelectric-metal-insulator-semiconductor structures using ferroelectric Al-doped HfO_2 thin films prepared by atomic-layer deposition with different O_3 doses

摘要

Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) capacitors using Al-doped HfO2 (Al:HfO2) ferroelectrics were proposed and the effects of O-3 doses were investigated. The memory window (MW) increased with increasing the areal ratios of the MIS to the MFM (S-I/S-F) and the largest MW was obtained at the largest S-I/S-F for both devices prepared with O-3 doses of 3 and 5 s. Contrarily, the retention of the device prepared with O-3 dose of 3 s could be improved compared with the device prepared with longer O-3 doses. Thus, the S-I/S-F and O-3 doses could be suggested as critical control parameters for the Al:HfO2 MFMIS capacitors. (C) 2019 The Japan Society of Applied Physics