Hydrogen Implantation and Annealing-Induced Exfoliation Process in SiC Wafers with Various Crystal Orientations

摘要

The influence of time and temperature were investigated in wafer exfoliation process by hydrogen implantation for 4H-SiC wafers with various orientations, on-axis and 8° off-axis (0001), (1100), and (1120). Void formation occurs isotropically for all the orientations investigated. The blistering rate (R) of 4H-SiC was found to be dependent on the crystal orientation of the wafer; R_(SiC)(0001)on-axis approx< R_(SiC)(0001)8o off-axis approx< R_(SiC)(1100) < R_(SiC)(1120). The blistering rate of (1120) is faster than those of the other three orientations. This result suggests that different annealing conditions are needed when fabricating SiC-on-insulator wafers of different crystal orientations.