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首页> 外文期刊>Japanese journal of applied physics >Imprinted 50 Nm Features Fabricated By Step And Stamp Uv Imprinting
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Imprinted 50 Nm Features Fabricated By Step And Stamp Uv Imprinting

机译:通过步进和印章Uv刻印制作的50 Nm刻印特征

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摘要

We fabricated features down to 50 nm by UV step and stamp imprint lithography (UV-SSIL). This method enables fast sequential imprinting for large areas operating at room temperature with a low-viscosity material. This allows the patterning of both large micron-scale and submicron-scale structures simultaneously. A low-viscosity polymer allows pattern transfer at moderate pressures, thereby reducing mechanical stress on the stamp and substrate. Processing at room temperature helps to maintain the alignment and to prevent the distortion of the features caused by the thermal expansion of the mold and substrate. A UV-SSIL experiment with a novel photosensitive polymer was performed using a prototype of currently commercially available machines used for both thermal and UV step and stamp imprintings. As a master, we used a transparent quartz stamp (with features down to 50 nm) patterned by electron-beam lithography. The polymer was dispensed on a 100 mm silicon substrate using a syringe-type dispensing system. The results were analyzed by atomic force microscopy and a scanning electron microscopy. The fabricated structures exhibited good lateral and vertical feature replication fidelities.
机译:我们通过UV步进和印记压印光刻(UV-SSIL)加工了低至50 nm的特征。这种方法可以在室温下使用低粘度材料对大面积区域进行快速连续压印。这允许同时对大型微米级和亚微米级结构进行构图。低粘度聚合物可在中等压力下进行图案转印,从而减少印模和基材上的机械应力。在室温下加工有助于保持对准并防止由于模具和基板的热膨胀而导致的特征变形。使用目前可商购的用于热敏和UV步进和压印的机器原型,对新型光敏聚合物进行了UV-SSIL实验。作为大师,我们使用了通过电子束光刻形成图案的透明石英图章(特征低至50 nm)。使用注射器型分配系统将聚合物分配在100 mm的硅基板上。通过原子力显微镜和扫描电子显微镜分析结果。所制造的结构表现出良好的横向和纵向特征复制保真度。

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