Optical Output Power Enhancement of Gallium Nitride Light-Emitting Diodes with Microlens Array on p-GaN Layer and Wave-Patterned Sidewalls by Gas-Assisted Focused Ion Beam Etching

摘要

By using iodine gas-assisted focused ion beam etching, a gallium nitride light-emitting diode with wave-patterned sidewalls and a microlens array on a p-GaN layer was successfully fabricated without an additional lithography process. The gallium nitride l