首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Spin Coating Film Transfer and Hot-Pressing System for Uniform Dielectric Formation and Its Application to Porous Low-k Film Formation
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Spin Coating Film Transfer and Hot-Pressing System for Uniform Dielectric Formation and Its Application to Porous Low-k Film Formation

机译:均匀介电层的旋涂膜转移和热压系统及其在多孔低k膜形成中的应用

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摘要

In this paper, we describe a transfer system that enables to form uniform dielectrics using spin coating film transfer and hot-pressing (STP) technology, and the applicability of a porous low-k material. The STP technology transfers a dielectric from a base film to a wafer by hot pressing in vacuum. We propose a processing unit that enables the handling of both the wafer and the base film. In the transfer unit, we also propose a scheme for transferring a dielectric to wafer uniformly. In the experiments, an organic porous low-k material, porous nanoporous polybenzoxazole dielectric (OxD) is used. The results on the film characteristics show no difference from those obtained by conventional spin coating. STP also enables planarization and sealing for patterned wafers with the porous OxD. It is confirmed that the STP process using porous OxD will be a candidate integration process.
机译:在本文中,我们描述了一种能够使用旋涂膜转移和热压(STP)技术形成均匀电介质的转移系统,以及多孔低k材料的适用性。 STP技术通过在真空中进行热压将电介质从基膜转移到晶圆。我们提出了一种能够同时处理晶片和基膜的处理单元。在传输单元中,我们还提出了一种将电介质均匀地传输到晶圆的方案。在实验中,使用有机多孔低k材料,多孔纳米多孔聚苯并恶唑电介质(OxD)。膜特性的结果表明与通过常规旋涂获得的结果没有差异。 STP还可以通过多孔OxD平坦化和密封图案化晶圆。可以肯定的是,使用多孔OxD的STP工艺将成为候选集成工艺。

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