机译:N_2O和O_2电感耦合等离子体刻蚀的酚醛基聚合物薄膜化学变化动力学:比较研究
Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam 339-700, Republic of Korea;
Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam 339-700, Republic of Korea;
IT Convergence and Components Laboratory, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, Republic of Korea;
IT Convergence and Components Laboratory, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, Republic of Korea;
IT Convergence and Components Laboratory, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, Republic of Korea;
Department of Electronic Devices and Materials Technology, Ivanovo State University of Chemistry and Technology, 7 F. Engels St., 153000 Ivanovo, Russia;
机译:CF_4 / O_2电感耦合等离子体中石英玻璃膜刻蚀机理的模型分析
机译:O_2 / CHF_3气体等离子体等离子体刻蚀低刻蚀聚对二甲苯-C膜的表面特性
机译:在O_2 / N_2 / Ar和H_2 / N_2 / Ar感应耦合等离子体中蚀刻的化学气相沉积非晶碳的线边缘粗糙度和轮廓角的比较
机译:使用O_2,N_2O,H_2O,O_2等离子体或N_2O等离子体和Hf(IV)叔丁醇对化学气相沉积二氧化Ha和掺杂二氧化Silicon的比较
机译:感应耦合等离子体蚀刻反应器中传输线效应和离子等离子体形成的表征。
机译:不同氟基混合气体使用电感耦合等离子体干法刻蚀钛酸钡薄膜的比较分析
机译:不同氟基混合气体使用电感耦合等离子体干法刻蚀钛酸钡薄膜的比较分析