Tunneling Explanation for the Temperature Dependence of Current-Voltage Characteristics of Pt/InN Schottky Barrier Diodes

Victor-Tapio Rangel-Kuoppa; Sami Suihkonen; Markku Sopanen; Harri Lipsanen

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Tunneling Explanation for the Temperature Dependence of Current-Voltage Characteristics of Pt/InN Schottky Barrier Diodes

机译：Pt / InN肖特基势垒二极管电流-电压特性的温度依赖性的隧穿解释

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The current-voltage (I-V) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factors were calculated using the Cheung method. The measurements were best explained using the tunnelling model. A value of m_⊥~* = 0,237m_o is obtained.

机译：在10-280K的温度范围内对Pt / InN肖特基势垒二极管进行了电流-电压（I-V）测量。发现该接触在高达280 K的条件下为肖特基，在更高的温度下变为不可逆的欧姆。理想因子是使用Cheung方法计算的。使用隧道模型可以最好地解释测量结果。获得的值为m_⊥〜* = 0.237m_o。

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《Japanese journal of applied physics 》 |2009年第7issue1期| 070201.1-070201.2| 共2页
作者
Victor-Tapio Rangel-Kuoppa; Sami Suihkonen; Markku Sopanen; Harri Lipsanen;
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Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 Helsinki, Finland;

Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 Helsinki, Finland;

Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 Helsinki, Finland;

Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 Helsinki, Finland;

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机译：具有非晶扩散势垒的Al-TiW-PtSi / n-Si肖特基势垒二极管中正向和反向偏置电流-电压特性的温度依赖性
2. Temperature dependence of current-voltage characteristics of an In/p-GaSe:Gd/Au-Sb Schottky barrier diode [J] . Songuel Duman Semiconductor science and technology . 2008 ,第7期

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3. Temperature dependence of current-voltage characteristics of Ag/p-SnS Schottky barrier diodes [J] . Sahin M, Safak H, Tugluoglu N, Applied Surface Science . 2005 ,第3a4期

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4. Temperature Dependence Of Current-Voltage Characteristics Of Pt / InN Schottky Barrier Diodes [C] . Victor-Tapio Rangel – Kuoppa, Sami Suihkonen, Markku Sopanen, International Conference on the Physics of Semiconductors . 2009

机译：PT / INN肖特基势垒二极管电流 - 电压特性的温度依赖性
5. Modeling the effects of many valley electron scattering on the current-voltage characteristics of resonant tunneling diodes. [D] . Kia, Arash Kojouri. 1994

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6. Mobility Models Based on Forward Current-Voltage Characteristics of P-type Pseudo-Vertical Diamond Schottky Barrier Diodes [O] . Min-Woo Ha, Ogyun Seok, Hojun Lee, 2020

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7. Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes [O] . Rangel-Kuoppa, Victor-Tapio, Suihkonen, Sami, Sopanen, Markku, 2009

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8. Bias and Temperature Dependence of Tunneling Phenomena in GaAs Schottky-Barrier Junctions. [R] . Carruthers, T. 1974

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Tunneling Explanation for the Temperature Dependence of Current-Voltage Characteristics of Pt/InN Schottky Barrier Diodes

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