Effect of Physical Properties of Al-Si Electrode Films on the Deformation Behaviors and the Strength of Thick Al Wire Bonds during Thermal Cycle Test

摘要

The deformation behaviors of Al-Si films and the strength change of Al wire bonds on Al-Si films during heating and cooling cycles have been investigated as a function of substrate temperature of the sputtering process; the purpose was to clarify reliability of both Al wire bonds and Al-Si films for use in insulated gate bipolar transistor (IGBT) modules. The extent of deformation in Al-Si films sputtered at 593 K during heating and cooling cycles was the smallest among films sputtered at room temperature (RT), 473 K, and 593 K. The strength of Al wire bonds on Al-Si films sputtered at the three temperatures was the highest for Al-Si films sputtered at 593 K. The reliability of Al wire bonds on Al-Si films formed at 593 K was about two times higher than the bond reliability on Al-Si films formed at RT and 473 K.