...
机译:氧钛钛酞菁双稳态电阻开关特性在存储器中的应用研究
Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, P. R. China;
Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, P. R. China;
Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, P. R. China;
Organic Solid Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, P. R. China;
Organic Solid Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, P. R. China;
Organic Solid Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, P. R. China;
Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, P. R. China;
机译:基于金纳米粒子和铜酞菁薄膜的低工作电压有机双稳态存储器件的可调转换特性
机译:非易失性存储应用中的聚(N-乙烯基咔唑)薄膜的双稳态电阻切换
机译:利用GaN / AlN共振隧穿二极管的电流-电压特性中的双稳态进行电阻切换存储操作
机译:用于非易失性存储应用的Cu / Cu:HfO
机译:砷化镓-铝砷化镓双模交叉耦合双稳态激光二极管的设计和制造,用于光学开关和存储应用。
机译:Al2O3膜的尺寸和厚度对Cu柱的影响以及3D交叉点存储应用的电阻开关特性
机译:用于非易失性存储器的机电双稳和多稳态桥的开关特性
机译:用于智能像素开关,自由空间互连和光存储器应用的集成双稳增益淬火垂直腔/面内激光器