Cost-Effective Anodization Technique for Fabricating Ion-Sensitive Field-Effect Transistor Device Sensitive Membrane

摘要

We report a cost-effective anodization technique for preparing ultrathin hafnium oxide at room temperature. The proposed method has been successfully applied as a H~+ sensitive membrane that exhibits linear pH sensitivity of approximately 58 mV/pH ranging from pH 1 to 13. To realize the hafnium oxide electrical characteristics, metal insulator semiconductor structures were fabricated and measured using high frequency capacitance-voltage and current-voltage measurements. X-ray photoelectron spectroscopy and atomic force microscopy were used to characterize the structural changes. Besides, the time-drift measurement also been examined and discussed. It is concluded that the proposed room-temperature anodization optimization process for preparing sensitive membrane decreases the thermal budget as well as enhances the sensitivity and reliability.