机译:通过紫外光激发臭氧退火改善化学气相沉积SiO_2薄膜的性能
Core Technology Reserch & Development Center, Meidensha Corporation, Numazu, Shizuoka 410-8588, Japan National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan;
Core Technology Reserch & Development Center, Meidensha Corporation, Numazu, Shizuoka 410-8588, Japan;
Core Technology Reserch & Development Center, Meidensha Corporation, Numazu, Shizuoka 410-8588, Japan National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan;
Core Technology Reserch & Development Center, Meidensha Corporation, Numazu, Shizuoka 410-8588, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan;
机译:紫外光激发臭氧对硅进行初始氧化的反应分析及其在SiO_2薄膜快速均匀生长中的应用
机译:通过准分子激光退火对溶胶-凝胶衍生的前驱膜制备的IGZO薄膜的物理性能的改善
机译:通过紫外线退火改善ZnMGO薄膜中的光学性质和控制缺陷态的缺陷态
机译:紫外臭氧退火对ZnMgO薄膜和纳米棒光学特性影响的比较研究
机译:氢退火和衬底温度对射频溅射氧化锌薄膜性能的影响
机译:通过生长后退火改善晶片级六方氮化硼薄膜的结构和光学性能
机译:通过电退火改善ITO薄膜的光电性能