Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition

摘要

We have deposited Si-incorporated diamond-like carbon (DLC) films by radio-frequency plasma-enhanced chemical vapor deposition using methane, argon, and organosilanes, and investigated the effects of Si source gas (monomethylsilane, dimethylsilane) and substrate bias (negative dc bias, negative pulse bias) on the structure and the mechanical and tribological properties of the films. The Si-DLC films deposited using monomethylsilane as a Si source gas tended to have a higher Si atomic fraction ratio [Si/(Si + C)] than the films deposited using dimethylsilane. Friction coefficient and internal stress decreased by the incorporation of Si into the films. However, many particles composed mainly of Si were observed on the film surfaces when deposition using a dc bias was carried out at higher monomethylsilane or dimethylsilane flow ratios. It was found that for both the Si source gases, the use of a pulse bias was effective in suppressing the formation of particles and further decreasing friction coefficient and internal stress. Additionally, the pulse-biased Si-DLC films were found to have a higher wear resistance than the dc-biased Si-DLC films.