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机译:使用单阴极和双阴极直流不平衡磁控溅射系统在未加热基板上制备纳米TiO_2薄膜的比较
Department of Physics, King Mongkut's University of Technology Thonburi, Bangkok 10140, Thailand;
rnDepartment of Physics, King Mongkut's University of Technology Thonburi, Bangkok 10140, Thailand;
rnDepartment of Physics, Burapha University, Chonburi 20131, Thailand Thailand Center of Excellence in Physics, CHE, 328 Si Ayutthaya Rd., Bangkok 10400, Thailand;
rnDepartment of Physics, King Mongkut's University of Technology Thonburi, Bangkok 10140, Thailand Thailand Center of Excellence in Physics, CHE, 328 Si Ayutthaya Rd., Bangkok 10400, Thailand;
rnDepartment of Physics, King Mongkut's University of Technology Thonburi, Bangkok 10140, Thailand Thailand Center of Excellence in Physics, CHE, 328 Si Ayutthaya Rd., Bangkok 10400, Thailand;
机译:金红石TiO 2的纳米结构。双阴极直流不平衡磁控溅射在未加热的基板上制备的薄膜
机译:脉冲直流反应磁控溅射未加热基板上亲水性TiO_2薄膜的制备与表征
机译:电感耦合等离子体辅助直流反应磁控溅射在未加热玻璃基板上生长的N掺杂TiO_2薄膜的特性
机译:基板偏置电压对双阴极DC不平衡磁控溅射制备的金红石TiO_2薄膜结构的影响
机译:脉冲反应直流磁控溅射技术制备的高介电常数薄膜的沉积和表征。
机译:直流磁控溅射过程中衬底偏置对VO2薄膜质量及其绝缘体-金属过渡行为的影响
机译:通过脉冲DC反应磁控溅射制备的加热底物中亲水性TiO2膜的制备与表征