High Temperature Operation of Boron-Implanted Diamond Field-Effect Transistors

摘要

Diamond field effect transistors (FETs) with Pt or Al Schottky gate electrodes were fabricated on high-quality boron (B)-implanted layers formed by combining ion-implantation and high-pressure and high-temperature annealing. The high temperature characteristics of these FETs were examined. Pt-gate B-implanted diamond FETs showed maximum drain current (I_(DS)) of 0.16mA/mm at gate voltage of -2 V and drain voltage of -20 V at 25 ℃. The I_(DS) increased as temperature increased because of the activation of boron, and it showed maximum value of 3.9 mA/mm at ～200℃. Al-gate FETs showed similar temperature dependence of I_(DS), though the operation temperature and I_(DS) were higher than those of Pt-gate FETs. High-temperature operation of the B-implanted diamond FETs was possible above 550 ℃ without severe drain bulk leakage, though the maximum I_(DS) gradually decreased as temperature increased because of drain bulk leakage above 300 ℃.