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Effect of Self-Assembled Monolayer Modification on Indium-Tin Oxide Surface for Surface-Initiated Vapor Deposition Polymerization of Carbazole Thin Films

机译:自组装单分子膜修饰对咔唑薄膜表面引发气相沉积聚合的氧化铟锡表面的影响

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摘要

With the aim of controlling the interface between an inorganic electrode and an organic layer, a surface-initiated vapor deposition polymerization method was employed to prepare carbazole polymer thin films that are chemically bound to an indium-tin oxide (ITO) surface. A self-assembled monolayer (SAM) that has an azo initiator as a terminal group was prepared on an ITO surface, on which carbazole acrylate monomers were evaporated under ultraviolet (UV) irradiation. The surface morphological characteristics of the films prepared with/without UV irradiation and with/ without the SAM were compared. It was found that the UV irradiation leads to the polymerization of carbazole monomers irrespective of the type of substrate used. On the other hand, the surface morphological characteristics were largely dependent on the existence of the SAM. Uniform and smooth polymer thin films were obtained only when the monomers were evaporated on the SAM-modified surface under UV irradiation. A comparison of film growth characteristics on a UV-ozone-treated ITO surface suggested that the formation of uniform films was made possible not by the modification of surface energy but by the growth of the polymers chemically bound to the substrate surface.
机译:为了控制无机电极和有机层之间的界面,采用表面引发的气相沉积聚合方法来制备化学键合到氧化铟锡(ITO)表面的咔唑聚合物薄膜。在ITO表面上制备具有偶氮引发剂作为端基的自组装单层(SAM),在紫外线(UV)照射下在其上蒸发咔唑丙烯酸酯单体。比较了有/无紫外线照射和有/无SAM制备的薄膜的表面形貌特征。已经发现,紫外线辐射导致咔唑单体的聚合,而与所用底物的类型无关。另一方面,表面形态特征很大程度上取决于SAM的存在。仅当单体在紫外线照射下在SAM改性表面上蒸发时,才能获得均匀且光滑的聚合物薄膜。在经过紫外线臭氧处理的ITO表面上的膜生长特性的比较表明,形成均匀的膜不是通过改变表面能,而是通过化学键合到基材表面的聚合物的生长来实现的。

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  • 来源
    《Japanese journal of applied physics》 |2010年第4issue2期|P.04DK21.1-04DK21.5|共5页
  • 作者单位

    Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;

    rnTokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;

    rnUniversity of Houston, 136 Fleming Building, Houston, TX 77204-5008, U.S.A.;

    rnTokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;

    rnTokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;

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