Anisotropic Transformation of 4H-SiC Etching Shapes by High-Temperature Annealing and Its Enhancement by Ion Implantation

摘要

The transformation of 4H-SiC etching shapes by high-temperature annealing was investigated. Although the opening of the etching mask was circular, the resulting etched shape was a hexagon, dodecagon, or rounded polygon with more edges, depending on the diameter. A hexagon was transformed into a dodecagon following high-temperature annealing, and a dodecagon was transformed into a rounded polygon.