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First-Principles Study of Structural Trend of BiMO_3 and BaMO_3: Relationship between Tetragonal or Rhombohedral Structure and the Tolerance Factors

机译:BiMO_3和BaMO_3的结构趋势的第一性原理研究:四方或菱形结构与公差因子之间的关系

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摘要

The relationship between a tetragonal or rhombohedral structure and the tolerance factors in BiMO_3 and BaMO_3 has been investigated using a first-principles calculation with optimized structures. BiMO_3 and BaMO_3, which consist of M ions with d~0-state transition metals (TMs) or non-TMs, were optimized within frameworks of P4mm (tetragonal) and R3m (rhombohedral) structures, and their total energies (E_(tetra) and E_(rhombo), respectively) were compared. In BiMO_3, except for BiGaO_3, the total energy difference △E (≡ E_(rhombo) - E_(tetra)) as a function of the tolerance factor t increases monotonically and smoothly, and the critical value from negative to positive in △E is about 1.00. In BiGaO_3 with d~(10)-state Ga ions, the tetragonal structure is more stable despite t < 1.00. This result is due to the strong Coulomb repulsion between Ga 3s, 3p, and 3d states and O 2p states, which is consistent with tetragonal BiZn_(0.5)Ti_(0.5)O_3 recently reported. In BaMO_3, on the other hand, the dependence of △E is more complicated, that is, positive, zero [i.e., cubic (Pm3m)], negative, and positive, as t increases. The trend of the above calculated results is consistent with that of experimantal results, and can be a principal guideline for material design. The above crystal structures of AMO_3 (A = Bi or Ba) are found to be closely related to the contribution of A ions to the local electric fields at M ions by the analysis of Lorentz corrections.
机译:使用具有优化结构的第一原理计算方法研究了BiMO_3和BaMO_3中四边形或菱形结构与公差因子之间的关系。 BiMO_3和BaMO_3由具有d〜0态过渡金属(TM)或非TM的M离子组成,在P4mm(四边形)和R3m(菱形)结构及其总能量(E_(四))的框架内进行了优化。和E_(rhombo),分别进行比较。在BiMO_3中,除了BiGaO_3以外,总能量差△E(≡E_(rhombo)-E_(tetra))作为公差因子t的函数单调平滑地增大,并且在△E中从负到正的临界值是约1.00。在具有d〜(10)态Ga离子的BiGaO_3中,尽管t <1.00,四方结构仍然更稳定。该结果归因于Ga 3s,3p和3d状态与O 2p状态之间的强烈库仑排斥力,这与最近报道的四方BiZn_(0.5)Ti_(0.5)O_3一致。另一方面,在BaMO_3中,随着t的增大,ΔE的依赖性更加复杂,即,正,零[即立方(Pm3m)],负和正。上述计算结果的趋势与实验结果的趋势一致,并且可以作为材料设计的主要指南。通过洛伦兹校正分析,发现上述AMO_3的晶体结构(A = Bi或Ba)与A离子对M离子处的局部电场的贡献密切相关。

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  • 来源
    《Japanese journal of applied physics》 |2010年第3issue1期|p.031501.1-031501.6|共6页
  • 作者

    Kaoru Miura; Tatsuo Furuta;

  • 作者单位

    Corporate R&D Headquarters, Canon Inc., 3-30-2 Shimomaruko, Ota, Tokyo 146-8501, Japan;

    Corporate R&D Headquarters, Canon Inc., 3-30-2 Shimomaruko, Ota, Tokyo 146-8501, Japan;

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