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首页> 外文期刊>Japanese journal of applied physics >Lead-Free Low-Melting and Semiconductive Vanadate Glass Applicable to Low-Temperature Sealing
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Lead-Free Low-Melting and Semiconductive Vanadate Glass Applicable to Low-Temperature Sealing

机译:适用于低温密封的无铅低熔点半导电钒酸盐玻璃

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摘要

We optimized the fundamental composition and additives in a semiconducting V_2O_5-P_2O5-TeO_2 glass system to develop lead-free low-melting glass suitable for low-temperature sealing below 400°C. Glass with a composition of 55.7V_2O_5-19.8P_2O_5-23.5TeO_2 (mol%) has a low glass transformation temperature (Tg < 300°C) as well as hard crystallization, and it is desired as a low-temperature sealing material. The effects of adding BaO, SD_2O_3, MnO_2, or Fe_2O_3 to the fundamental composition of 55.7V_2O_5-19.8P_2O_5-23.5TeO_2 (mol %) on the thermal properties and water-vapor resistance were then characterized. Adding 11.7 mol % Fe_2O_3 improved the water-vapor resistance drastically and decreased the thermal expansion coefficient without increasing T_9. Sealing at 360°C with our lead-free Fe_2O_3-added vanadate glass enabled practical airtight packaging on an electronic device.
机译:我们在半导体V_2O_5-P_2O5-TeO_2玻璃系统中优化了基本成分和添加剂,以开发适用于400°C以下低温密封的无铅低熔点玻璃。组成为55.7V_2O_5-19.8P_2O_5-23.5TeO_2(mol%)的玻璃具有低的玻璃化转变温度(Tg <300°C)和坚硬的结晶,并且期望作为低温密封材料。然后表征了向55.7V_2O_5-19.8P_2O_5-23.5TeO_2(mol%)的基本组成中添加BaO,SD_2O_3,MnO_2或Fe_2O_3对热性能和耐水蒸气性的影响。添加11.7mol%的Fe_2O_3极大地提高了耐水蒸气性,并且在不增加T_9的情况下降低了热膨胀系数。用我们添加无铅的Fe_2O_3钒酸盐玻璃在360°C密封,可以在电子设备上进行实用的气密包装。

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  • 来源
    《Japanese journal of applied physics》 |2011年第8issue1期|p.088002.1-088002.2|共2页
  • 作者单位

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan,Hitachi Research Laboratory, Hitachi, Ltd., Hitachi, Ibaraki 319-1292, Japan;

    Hitachi Research Laboratory, Hitachi, Ltd., Hitachi, Ibaraki 319-1292, Japan;

    Hitachi Research Laboratory, Hitachi, Ltd., Hitachi, Ibaraki 319-1292, Japan;

    Inorganic Materials Sector, Hitachi Chemical Co., Ltd., Tako, Chiba 289-2247, Japan;

    Inorganic Materials Sector, Hitachi Chemical Co., Ltd., Tako, Chiba 289-2247, Japan;

    Inorganic Materials Sector, Hitachi Chemical Co., Ltd., Tako, Chiba 289-2247, Japan;

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan,Patent Attorney, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

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