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首页> 外文期刊>Japanese journal of applied physics >Improvement of Photoelectrochemical Properties by Surface Modification with Iron Oxide on p-Type Si Electrodes for Hydrogen Evolution from Water
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Improvement of Photoelectrochemical Properties by Surface Modification with Iron Oxide on p-Type Si Electrodes for Hydrogen Evolution from Water

机译:在p型硅电极上用氧化铁表面改性改善光电化学性质,从而从水析出氢。

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摘要

Surface modifications using platinum (Pt) particles and iron oxides (FeO_x) were found to lead to a significant improvement in the current-potential (J-E) properties for hydrogen evolution from water in p-type silicon (p-Si) electrodes. The onset potential and cathodic photocurrent for hydrogen evolution from the Pt/p-Si(100) electrode were, respectively, 0.50 VRHe and 0.28mA/cm~2 at 0 Vrhe (RHE: reversible hydrogen electrode). When the p-Si(100) electrode was coated with iron oxide followed by Pt particles [Pt/FeOx/p-Si(100)], it showed an onset potential and photocurrent of 0.85 Vrhe and 2.45mA/cm~2 at OVrhe, respectively. A detailed study of surface morphology and a comparative study between (100) plane and (111) plane p-Si electrodes revealed that the dramatic improvement in J-E properties was the result of a change in the surface structure and tailing of Fed* in p-Si.
机译:发现使用铂(Pt)颗粒和氧化铁(FeO_x)进行的表面改性可显着改善用于在p型硅(p-Si)电极中从水中放出氢的电流电位(J-E)特性。从Pt / p-Si(100)电极放出氢的起始电位和阴极光电流在0 Vrhe(RHE:可逆氢电极)下分别为0.50 VRHe和0.28mA / cm〜2。当在p-Si(100)电极上涂上氧化铁,然后涂上Pt颗粒[Pt / FeOx / p-Si(100)]时,在OVrhe下显示出的起始电势和光电流分别为0.85 Vrhe和2.45mA / cm〜2 , 分别。对表面形态的详细研究以及在(100)平面和(111)平面p-Si电极之间的比较研究表明,JE性能的显着改善是由于p-Si表面结构和Fed *拖尾的改变的结果硅。

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  • 来源
    《Japanese journal of applied physics 》 |2011年第8issue1期| p.085702.1-085702.5| 共5页
  • 作者单位

    Department of Chemical System Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;

    Department of Chemical System Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;

    Department of Chemical System Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;

    Department of Chemical System Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;

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