Robust Noise Characteristics in Carbon Nanotube Transistors Based on Stochastic Resonance and Their Summing Networks

摘要

Robust noise characteristics in carbon nanotube field-effect transistors (CNT-FETs) based on stochastic resonance (SR) were demonstrated to detect small signals in noisy environments. When weak pulse trains were applied to a CNT-FET in the subthreshold regime, the correlation coefficient between the input and output signals increased upon adding an appropriate intensity of noise. Offset-voltage dependences were investigated, and moreover, a virtual summing network was formed using CNT-FETs having different offset voltages. The measurement indicated that responses correlated with the input signals were enhanced in a wide range of noise intensity. Therefore, the summing network based on SR is a promising candidate for highly sensitive label-free sensors which are to be utilized in unintentionally noisy environments.