...
首页> 外文期刊>Japanese journal of applied physics >Effect of Oxygen Vacancy and Oxygen Vacancy Migration on Dielectric Response of BaTiO_3-Based Ceramics
【24h】

Effect of Oxygen Vacancy and Oxygen Vacancy Migration on Dielectric Response of BaTiO_3-Based Ceramics

机译:氧空位和氧空位迁移对BaTiO_3基陶瓷介电响应的影响

获取原文
获取原文并翻译 | 示例
           

摘要

The effects of oxygen vacancies and their migrations on the dielectric responses of pure BaTiC>3 (BT) ceramics and (Ba_(0.9)Ca_(0.1))1.01i(Ti_(0.9)Zr_(0.1))03 (BCTZ) ceramics, where portions of Ba and Ti were respectively substituted with Ca and Zr, were studied using wideband dielectric spectroscopy. The decrease in the dipole polarization of BT ceramics after annealing in a reducing atmosphere was due to domain-wall clamping by oxygen vacancies, while that of ionic polarization was attributable to lattice hardening by the incorporation of oxygen vacancies into the BT lattices. The dipole polarization of BCTZ ceramics indicated the same change as did that of BT ceramics after annealing, but the ionic polarization was independent of PO_2 in annealing because of the anti-reducing behavior of BCTZ ceramics. The oxygen vacancy migration in BCTZ ceramics could be detected as a change of wideband dielectric spectra. The change observed only in the dipole polarization could be explained the oxygen vacancy migration from the anode to the cathode.
机译:氧空位及其迁移对纯BaTiC> 3(BT)陶瓷和(Ba_(0.9)Ca_(0.1))1.01i(Ti_(0.9)Zr_(0.1))03(BCTZ)陶瓷介电响应的影响,其中的Ba和Ti部分分别被Ca和Zr取代,使用宽带介电谱进行了研究。在还原性气氛中退火后,BT陶瓷的偶极极化降低是由于氧空位对畴壁的夹持,而离子极化的归因于氧空位结合到BT晶格中而使晶格硬化。退火后,BCTZ陶瓷的偶极极化变化与BT陶瓷相同,但由于BCTZ陶瓷的抗还原性能,其离子极化与退火中的PO_2无关。 BCTZ陶瓷中的氧空位迁移可以检测为宽带介电谱的变化。仅在偶极极化中观察到的变化可以解释为氧空位从阳极迁移到阴极。

著录项

  • 来源
    《Japanese journal of applied physics》 |2011年第3issue1期|p.127-131|共5页
  • 作者单位

    Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan;

    Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan;

    Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan;

    Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号