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Effect of Sintering Temperature on Electrical Properties of Chip on Glass Module with Direct Printing Method

机译:直接印刷法烧结温度对玻璃组件芯片电性能的影响

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摘要

In order to apply the direct printing method to the fabrication of chip on glass (COG) modules, we examined that the effect of the sintering temperature on the electrical properties of a COG module with direct printing method. Firstly, we fabricated an Ag conductive circuit on a glass substrate by the screen-printing method. To investigate its the effect on the electrical properties of the circuit, it was sintered at various temperatures, such as 150, 200, 250, and 300℃ for 30 min. Subsequently, we conducted Au electro-plating for the fabrication of a Si dummy chip. Finally, the flip-chip bonding process was conducted using anisotropic conductive film (ACF). The printed Ag circuits were well formed on the quartz substrate without any shorts or remarkable changes compared with the initial design. The electrical properties of the printed Ag circuits improved with increasing sintering temperature. The conductive particles in the ACF were well deformed in between the Au bumps and printed Ag pads after the bonding process. The four-point probe method was employed to measure the connection resistance of the joints constructed with the Au bumps on the Si chip and printed Ag circuit on the quartz substrate. The resistances of the interconnections drastically decreased with increasing sintering temperature, i.e., subsequently converged from 11.8Ω, to 7.36 mΩ.
机译:为了将直接印刷方法应用于玻璃上芯片(COG)模块的制造,我们检查了烧结温度对直接印刷方法对COG模块电性能的影响。首先,我们通过丝网印刷法在玻璃基板上制作了银导电电路。为了研究其对电路电性能的影响,将其在各种温度下(例如150、200、250和300℃)烧结30分钟。随后,我们进行了Au电镀,以制造Si虚拟芯片。最后,使用各向异性导电膜(ACF)进行倒装芯片接合工艺。与初始设计相比,印刷的Ag电路在石英基板上形成良好,没有任何短路或明显变化。随着烧结温度的升高,印刷的Ag电路的电性能得到改善。在键合工艺之后,ACF中的导电颗粒在Au凸块和印刷的Ag焊盘之间充分变形。采用四点探针法测量由Si芯片上的Au凸块和石英基板上的印刷Ag电路构成的接头的连接电阻。随着烧结温度的升高,互连的电阻急剧减小,即随后从11.8Ω收敛到7.36mΩ。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue3期|09MJ04.1-09MJ04.6|共6页
  • 作者单位

    School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea;

    School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea;

    School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea;

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