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Multiple-Height Microstructure Fabricated by Deep Reactive Ion Etching and Selective Ashing of Resist Layer Combined with Ultraviolet Curing

机译:深反应离子刻蚀和抗蚀剂层选择性灰化结合紫外光固化形成的多层高微结构

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摘要

UV-cured photoresist is applied to the delay masking process to realize a multiple-height microstructure for the first time. Although the UV-cured photoresist is a soft mask, its material property becomes stable against resist thinner and UV exposure. A layered resist pattern can be realized by stacking normal photoresist on the UV-cured photoresist. The UV curing increases the glass transition temperature from 120 to 160℃. By controlling the temperature, the normal photoresist can be ashed twice as fast as the UV-cured photoresist. This selectivity can be combined with the deep reactive ion etching of Si, and a microstructure having three different etching depths is realized, thus forming a micromirror. The multiple-height structure is advantageous for reducing the inertia of the mirror plate. For the same rotational spring constant, the micromirror has a higher resonant frequency, which is required for realizing higher-resolution laser displays.
机译:将紫外线固化的光致抗蚀剂应用于延迟掩膜工艺,以首次实现多层高微结构。尽管紫外线固化的光致抗蚀剂是一种软掩模,但其材料性能在抵抗抗蚀剂变薄和紫外线暴露方面变得稳定。可以通过在紫外线固化的光刻胶上堆叠普通光刻胶来实现分层光刻胶图案。 UV固化将玻璃化转变温度从120℃提高到160℃。通过控制温度,普通光刻胶的灰化速度是UV固化光刻胶的两倍。该选择性可以与Si的深反应性离子蚀刻结合,并且实现具有三种不同蚀刻深度的微结构,从而形成微镜。多高度结构对于减小镜板的惯性是有利的。对于相同的旋转弹簧常数,微镜具有较高的谐振频率,这是实现更高分辨率的激光显示器所必需的。

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  • 来源
    《Japanese journal of applied physics》 |2012年第1issue2期|p.01AB04.1-01AB04.6|共6页
  • 作者单位

    Department of Advanced Science and Technology, Toyota Technological Institute, Nagoya 468-8511, Japan;

    Department of Advanced Science and Technology, Toyota Technological Institute, Nagoya 468-8511, Japan;

    Department of Advanced Science and Technology, Toyota Technological Institute, Nagoya 468-8511, Japan;

    Department of Advanced Science and Technology, Toyota Technological Institute, Nagoya 468-8511, Japan;

    Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan;

    Department of Advanced Science and Technology, Toyota Technological Institute, Nagoya 468-8511, Japan;

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