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机译:栅诱导的漏漏应力过程中热电子诱导的器件性能下降
Samsung Electronics Co., Ltd., Yongin, Gyeonggi 446-711, Korea,School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea;
School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea;
School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea;
School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea;
School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea;
Samsung Electronics Co., Ltd., Yongin, Gyeonggi 446-711, Korea;
Samsung Electronics Co., Ltd., Yongin, Gyeonggi 446-711, Korea;
School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea;
机译:在沟道热载流子/栅极引起的漏极泄漏交替应力作用下,具有高k /金属栅叠层的n-MOSFET的增强降解
机译:n-MOSFET在沟道热电子应力期间栅诱导的漏极泄漏电流退化及其时间依赖性
机译:一种新颖的双偏置注入源极/漏极技术,可通过0.12- / splμm/ m单栅极低功耗SRAM器件来减少栅极感应的漏极泄漏
机译:GIDL(栅极诱导的排水泄漏)和寄生肖特基屏障泄漏消除在积极缩放的HFO {SUB} 2 / TIN FINFET器件中
机译:压电装置在等效交通压力条件下作为能量收集器的性能下降。
机译:利用IGZO和IGO沟道层的氧化物薄膜晶体管的漏极偏压降解现象的起源。
机译:通过优化22 nm和32 nm sOI nFET中的结型线来抑制栅极引起的漏极泄漏
机译:mOs器件中栅极引漏漏电流