Temperature and Light Intensity Dependence of Photocurrent Transport Mechanisms in InGaN p-i-n Homojunction Solar Cells

摘要

The photovoltaic (PV) properties of the InGaN p-i-n homojunction solar cell are investigated at different temperatures and light intensities. With increasing temperature, the dark current-voltage (Ⅰ-Ⅴ) behaviors display a large variation especially at the forward voltage near the open-circuit voltage (V_(oc)) region, which leads to a great degradation of the l/oc at high temperatures. The short-circuit current density (J_(sc)) first increases and then decreases as temperature increases. The photocurrent transport mechanisms at different temperatures and light intensities are analyzed by fitting the Ⅰ-Ⅴ curves using different carriers transport models. The traps inside the p-i-n junction especially in the p-type region tend to be activated at elevated temperatures above 338 K, which increase the recombination and reduce J_(sc). The conversion efficiencies of the solar cell are mainly affected by V_(oc), which degrades rapidly with elevated temperatures.