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机译:化学气相沉积钴衬里集成式铜间隙填充工艺的性能
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan;
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan;
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan;
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan;
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan;
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan;
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan;
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan;
机译:通过循环金属有机化学气相沉积法将铜铝合金间隙填充到纳米沟槽中
机译:基于内存合金的微观弯曲致动器,由聚焦离子束化学气相沉积(FIB-CVD)间隙填充过程制造
机译:亚大气化学气相沉积工艺,用于通过硅通孔以高长宽比沉积氧化层
机译:集成电路修复中铜和镍的激光化学气相沉积
机译:通过金属有机化学气相沉积相选择合成Tl-Ba-Ca-Cu-O薄膜和多层结构。工艺优化,相变,电学表征和微结构发展。
机译:在Nafion负载的电化学沉积钴纳米粒子上进行等离子体增强化学气相沉积产生的金属/碳杂化纳米结构
机译:采用氧气辅助化学气相沉积工艺合成高纯度单壁碳纳米管从钴纳米粒子的小直径
机译:评估吸收光谱监测YBa {sub 2} Cu {sub 3} O {sub 7 {minus} x}金属有机物化学气相沉积处理的前驱物