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首页> 外文期刊>Japanese journal of applied physics >Effect of Target Surface Microstructure on Morphological and Electrical Properties of Pulsed-Laser-Deposited BiFeO_3 Epitaxial Thin Films
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Effect of Target Surface Microstructure on Morphological and Electrical Properties of Pulsed-Laser-Deposited BiFeO_3 Epitaxial Thin Films

机译:目标表面微观结构对脉冲激光沉积BiFeO_3外延薄膜形貌和电学性能的影响

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摘要

The effect of target surface microstructure on the morphological and electrical properties was studied on pulsed-laser-deposited lead-free ferroelectric BiFeO_3 with a relatively low energy gap of about 2.7 eV and a high absorption coefficient of about 10~5cm~(-1) among ferroelectric materials. It was found that a columnar structure was formed on the target surface during the deposition and that droplet density increased when the columnar structure formed. We modified the driving system for the target to prevent the formation of the columnar structure. With the use of the target driving system, droplet density decreased to 42% relative to that without the use of the system. The effects of the morphology change of the target on the growth and electrical properties of BiFeO_3 epitaxial films were also investigated. With the introduction of the system, breakdown voltage increased from 140 to 290kV/cm and coercive field decreased from 112 to 82kV/cm.
机译:研究了脉冲激光沉积的无铅铁电BiFeO_3的靶表面微观结构对形貌和电学性能的影响,该带隙的能隙相对较低,约为2.7 eV,吸收系数约为10〜5cm〜(-1)。在铁电材料中。发现在沉积过程中在目标表面上形成了柱状结构,并且当形成柱状结构时液滴密度增加。我们修改了目标的驱动系统,以防止形成柱状结构。使用目标驱动系统,相对于不使用系统的液滴密度,液滴密度降低到42%。还研究了靶材的形态变化对BiFeO_3外延膜生长和电学性能的影响。随着系统的引入,击穿电压从140kV / cm增加到290kV / cm,矫顽场从112kV / cm减小到82kV / cm。

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  • 来源
    《Japanese journal of applied physics》 |2013年第4issue1期|045803.1-045803.5|共5页
  • 作者单位

    Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan;

    Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan;

    Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan;

    Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan;

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