Oxide Thin-Film Transistors Fabricated Using Biodegradable Gate Dielectric Layer of Chicken Albumen

摘要

An oxide thin-film transistor (TFT) using chicken albumen as gate dielectric on paper substrate was demonstrated. Chicken albumen, which was directly extracted from chicken egg white, was deposited as gate dielectric layer. An ln-Ga-Zn-O was chosen as an active channel. The TFT feasibilities were successfully confirmed, in which channel mobility and subthreshold slope of the TFT were 6.48 cm~2 V~(-1) s~(-1) and 1.28V/S, respectively. This is the first report on the device configuration combining the biodegradable gate insulator and oxide semiconducting channel.