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首页> 外文期刊>Japanese journal of applied physics >Cathodoluminescence spectra of Ga-In-O polycrystalline films fabricated by molecular precursor method
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Cathodoluminescence spectra of Ga-In-O polycrystalline films fabricated by molecular precursor method

机译：分子前驱体法制备的Ga-In-O多晶薄膜的阴极发光光谱

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摘要

Cathodoluminescence (CL) spectra were measured from polycrystalline Ga-In-O (GIO) films prepared by the molecular precursor method (MPM). Bandgap-energy (E_g) and conductivity were successfully controlled by changing in the mixing ratio of the Ga and In precursor solutions. Although none of the films exhibited a near-band-edge emission, their CL emissions exhibited energy shifts by reflecting changes in E_g and ligand field in the GIO alloys. The results indicate a practical use of MPM-grown GIO films for deep ultraviolet optoelectronic devices.
机译：从通过分子前驱体方法（MPM）制备的多晶Ga-In-O（GIO）膜中测量阴极发光（CL）光谱。通过改变Ga和In前驱体溶液的混合比例，成功地控制了带隙能（E_g）和电导率。尽管这些膜均未显示出近带边缘发射，但它们的CL发射却通过反映GIO合金中E_g和配体场的变化而显示出能量转移。结果表明，MPM生长的GIO膜可用于深紫外光电器件。

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  • 来源
    《Japanese journal of applied physics》 |2014年第5s1期|05FF02.1-05FF02.4|共4页
  • 作者

    Takeyoshi Onuma; Taihei Yasuno; Soichiro Takano; Ryousuke Goto; Shuhei Fujioka; Takumi Hatakeyama; Takuto Oda; Hiroki Hara; Chihiro Mochizuki; Hiroki Nagai; Tomohiro Yamaguchi; Mitsunobu Sato; Tohru Honda;

  • 作者单位

    Physics division, Department of Liberal Arts, Tokyo National College of Technology, Hachioji, Tokyo 193-0997, Japan,Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015, Japan;

    Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015, Japan;

    Coordination Engineering Laboratory, Division of Liberal Arts, Kogakuin University, Hachioji, Tokyo 192-0015, Japan;

    Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015, Japan;

    Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015, Japan;

    Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015, Japan;

    Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015, Japan;

    Research Institute of Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015, Japan;

    Research Institute of Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015, Japan;

    Research Institute of Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015, Japan;

    Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015, Japan;

    Research Institute of Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015, Japan;

    Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015, Japan;

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