Department of Applied Physics, School of Advanced Engineering, Graduate School of Engineering, Kogakuin University, Japan;
Department of Applied Physics, School of Advanced Engineering, Graduate School of Engineering, Kogakuin University, Japan;
Department of Applied Physics, School of Advanced Engineering, Graduate School of Engineering, Kogakuin University, Japan;
Department of Applied Physics, School of Advanced Engineering, Graduate School of Engineering, Kogakuin University, Japan;
Department of Applied Physics, School of Advanced Engineering, Graduate School of Engineering, Kogakuin University, Japan;
Department of Electronic Engineering, Yeungnam University, Korea;
Department of Applied Physics, School of Advanced Engineering, Graduate School of Engineering, Kogakuin University, Japan;
Department of Applied Physics, School of Advanced Engineering, Graduate School of Engineering, Kogakuin University, Japan;
Films; Light emitting diodes; Plasmons; Zinc oxide; II-VI semiconductor materials; Reflectivity; Photoluminescence;
机译:分子前驱体法制备Ag分散的ZnO薄膜及其在GalnN蓝光LED中的应用
机译:ZnO / Ag界面的形貌对ZnO薄膜表面等离子体增强发射的影响
机译:表面等离子体激元增强磁控溅射沉积在Ag / Si(001)上的ZnO薄膜的紫外线发射
机译:来自分子前体法制备的Ag分散ZnO膜的表面等离子体谐振发射
机译:同步加速器X射线光谱和成像研究了ZnO薄膜和钢表面的表面形态和化学演变。
机译:基于表面等离子体共振的电聚合分子印迹膜制备的三聚氰胺检测光纤探头。
机译:表面等离子体激元增强磁控溅射沉积在Ag / Si(001)上的ZnO薄膜的紫外线发射