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首页> 外文期刊>Japanese journal of applied physics >Characterizations of epitaxial Bi(Mg_(1/2)Ti_(1-2))O_3-Bi(Zn_(1-2)Ti_(1-2))O_3 solid solution films grown by pulsed laser deposition
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Characterizations of epitaxial Bi(Mg_(1/2)Ti_(1-2))O_3-Bi(Zn_(1-2)Ti_(1-2))O_3 solid solution films grown by pulsed laser deposition

机译:通过脉冲激光沉积生长的外延Bi(Mg_(1/2)Ti_(1-2))O_3-Bi(Zn_(1-2)Ti_(1-2))O_3固溶膜的表征

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摘要

(111)-oriented epitaxial (1 -x)Bi(Mg_(1/2)Th_(1/2))O_3-xBi(Zn_(1/2)Ti_(1/2))O_3 solid solution films were grown on (111)_cSrRuO_3/(111)SrTiO_3 substrates by pulsed laser deposition, and their crystal structure and electrical properties were characterized. The solid solution films consisted of a perovskite single phase in the x range of 0-0.93. The coexistence region of rhombohedral and tetragonal phases was observed in the x range of 0.18-0.60, which differed from reported data for the powders synthesized at high temperatures and high pressures. The polarization-electric field hysteresis loops originating from ferroelectricity were observed at room temperature and 1 kHz in the x range of 0-0.33, and the remanent polarization monotonously decreased with increasing x. The relative dielectric constant measured at room temperature and 100 kHz and the apparent piezoelectric constant evaluated by piezoresponse force microscopy at room temperature and 5 Hz were maximum at approximately x = 0.14. These results suggest that these tendencies of the electrical and electromechanical properties were related to the volume fractions of the constituent phases in the solid solution films.
机译:在(111)取向的外延(1-x)Bi(Mg_(1/2)Th_(1/2))O_3-xBi(Zn_(1/2)Ti_(1/2))O_3固溶膜上生长(111)_cSrRuO_3 /(111)SrTiO_3衬底的脉冲激光沉积,并对其晶体结构和电性能进行了表征。固溶体膜由钙钛矿单相组成,x范围为0-0.93。在0.18-0.60的x范围内观察到菱形和四方相的共存区域,这与在高温高压下合成的粉末的报道数据不同。在室温和1 kHz下,在0-0.33的x范围内观察到源自铁电的极化电场磁滞回线,并且剩余极化随x的增加单调减少。在室温和100 kHz下测得的相对介电常数以及在室温和5 Hz下通过压电响应力显微镜评估的表观压电常数最大,约为x = 0.14。这些结果表明,电气和机电性能的这些趋势与固溶体膜中组成相的体积分数有关。

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  • 来源
    《Japanese journal of applied physics》 |2014年第5s1期|05FE06.1-05FE06.5|共5页
  • 作者单位

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan;

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan,Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Corporate R&D Headquarters, Canon Inc., Ota, Tokyo 146-8501, Japan;

    Corporate R&D Headquarters, Canon Inc., Ota, Tokyo 146-8501, Japan;

    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan;

    Corporate R&D Headquarters, Canon Inc., Ota, Tokyo 146-8501, Japan;

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan;

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