Analog design optimization methodology for ultralow-power circuits using intuitive inversion-level and saturation-level parameters

摘要

A comprehensive design optimization methodology using intuitive nondimensional parameters of inversion-level and saturation-level is proposed, especially for ultralow-power, low-voltage, and high-performance analog circuits with mixed strong, moderate, and weak inversion metal-oxide-semiconductor transistor (MOST) operations. This methodology is based on the synthesized charge-based MOST model composed of Enz-Krummenacher-Vittoz (EKV) basic concepts and advanced-compact-model (ACM) physics-based equations. The key concept of this methodology is that all circuit and system characteristics are described as some multivariate functions of inversion-level parameters, where the inversion level is used as an independent variable representative of each MOST. The analog circuit design starts from the first step of inversion-level design using universal characteristics expressed by circuit currents and inversion-level parameters without process-dependent parameters, followed by the second step of foundry-process-dependent design and the last step of verification using saturation-level criteria. This methodology also paves the way to an intuitive and comprehensive design approach for many kinds of analog circuit specifications by optimization using inversion-level log-scale diagrams and saturation-level criteria. In this paper, we introduce an example of our design methodology for a two-stage Miller amplifier.