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Study on two kinds of novel 220 GHz folded-waveguide traveling-wave tube

机译：两种新颖的220 GHz折叠波导行波管的研究

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摘要

Two kinds of novel 220 GHz folded-waveguide (FWG) slow-wave structure (SWS) with different electron-beam tunnels are presented for producing a high power and considerable bandwidth. These structures, which have the potential to have a better performance than the conventional FWG SWS, are suitable for circle-beam electron guns and sheet-beam electron guns, respectively. In this study, the electromagnetic characteristics and nonlinear interaction between the electron beam and the electromagnetic field of the two kinds of novel FWG are investigated on the basis of simulation results. The influence of the beam tunnel with respect to its transverse shape and size on the circuit performance is investigated in detail. With different beam tunnels, the two novel FWGs exhibit similar radio-frequency characteristics and signal gain. Particle-in-cell simulation peak input power. Compared with the conventional FWG SWS, the novel FWGs have 32% higher output power under optimized conditions.
机译：提出了两种具有不同电子束隧道的新型220 GHz折叠波导（FWG）慢波结构（SWS），以产生高功率和相当大的带宽。这些结构可能具有比常规FWG SWS更好的性能，分别适合于圆束电子枪和薄束电子枪。本文在仿真结果的基础上，研究了两种新型FWG的电磁特性以及电子束与电磁场之间的非线性相互作用。详细研究了束隧道相对于其横向形状和尺寸对电路性能的影响。使用不同的束隧道，这两个新颖的FWG表现出相似的射频特性和信号增益。粒子模拟峰值输入功率。与常规FWG SWS相比，新型FWG在优化条件下的输出功率高32％。

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  • 来源
    《Japanese journal of applied physics》 |2014年第3期|036201.1-036201.6|共6页
  • 作者

    Minghao Zhang; Yanyu Wei; Guo Guo; Lingna Yue; Yuanyuan Wang; Xianbao Shi; Xianfeng Tang; Yubin Gong; Wenxiang Wang; Dazhi Li;

  • 作者单位

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics,University of Electronic Science and Technology of China, Chengdu 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics,University of Electronic Science and Technology of China, Chengdu 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics,University of Electronic Science and Technology of China, Chengdu 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics,University of Electronic Science and Technology of China, Chengdu 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics,University of Electronic Science and Technology of China, Chengdu 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics,University of Electronic Science and Technology of China, Chengdu 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics,University of Electronic Science and Technology of China, Chengdu 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics,University of Electronic Science and Technology of China, Chengdu 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics,University of Electronic Science and Technology of China, Chengdu 610054, China;

    Institute for Laser Technology, Suita, Osaka 565-0871, Japan;

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