Theoretical analysis of light-emission characteristics in blue saw-like InGaN/GaN light-emitting diodes with several well widths

摘要

The light-emission characteristics of saw-like InGaN/GaN quantum-well (QW) light-emitting diodes (LEDs) with several well widths are investigated using the multiband effective mass theory. These results are compared with those of the conventional QW structures. In the case of the conventional QW structures, the spontaneous emission peak rapidly decreases with increasing well width. On the other hand, in the case of the saw-like QW structure, the well width dependence of the spontaneous emission peak is greatly reduced. That is, the spontaneous emission peak of the saw-like QW structure with the well width of 3 nm is shown to be comparable to that of the saw-like QW structure with the well width of 2.5 nm. Also, the saw-like QW structures show much larger spontaneous emission peaks than the conventional QW structures, irrespective of the well width. We expect that saw-like QW structures will be desirable as high-efficiency blue InGaN/GaN LEDs.