Design of an optimised readout architecture for phase-change probe memory using Ge_2Sb_2Te_5 media

摘要

Phase-change probe memory has recently received considerable attention on its writing performance, while its readout performance is rarely evaluated. Therefore, a three-dimensional readout model has been developed for the first time to calculate the reading contrast by varying the electrical conductivities and the thickness of the capping and under layers as well as the thickness of the Ge_2Sb_2Te_5 layer. It is found that a phase-change probe architecture, consisting of a 10 nm Ge_2Sb_2Te_5 layer sandwiched by a 2 nm, 50 Ω~(-1) m~(-1) capping layer and a 40 nm, 5 × 10~6 Ω~(-1) m~(-1) under layer, has the capability of providing the optimal readout performance.