A physics-based three dimensional readout model for phase-change probe memory

摘要

A physics-based three dimensional model is developed for the first time to assess the readout performance of phase-change probe memory. The isolated bit responses for reading a crystalline bit with an amorphous background and an amorphous bit with a crystalline background are investigated using this model under a calculated safe readout potential, resulting in a practicable readout current. The readout performances of multiple bit arrays for both cases are also evaluated to establish the influence of noise sources on the readout signal in terms of the inter-track interference and the inter-symbol interference. The results reveal that the configuration having an amorphous bit with a crystalline background exhibits a better anti-interference characteristic than the crystalline counterpart.