...
首页> 外文期刊>Japanese journal of applied physics >Room temperature ferromagnetism in magnetron sputtering prepared Mn-doped ZnO thin films
【24h】

Room temperature ferromagnetism in magnetron sputtering prepared Mn-doped ZnO thin films

机译:磁控溅射中室温铁磁性制备掺锰的ZnO薄膜

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Room temperature ferromagnetism has been observed in Mn-doped ZnO thin films using radio frequency magnetron sputtering. X-ray diffraction measurements show that the samples possess wurtize structures without secondary phases. Magnetization loops for Mn-doped ZnO thin film which deposited at 300 degrees C and annealed in O-2 atmosphere at 500 degrees C were measured at 300K and show ferromagnetic behaviour. In our study, the result shows that it is the substitutional Mn2+ ions that make the ferromagnetic ordering in Mn doped ZnO thin films. Ferromagentic ordering becomes weaker at higher concentration of oxygen vacancy. (C) 2015 The Japan Society of Applied Physics
机译:使用射频磁控溅射已在掺锰的ZnO薄膜中观察到室温铁磁性。 X射线衍射测量表明,样品具有无二级结构的蠕变结构。在300K下测量了Mn掺杂的ZnO薄膜的磁化回路,该薄膜在300℃下沉积并在O-2气氛中在500℃下退火,并显示出铁磁行为。在我们的研究中,结果表明,在Mn掺杂的ZnO薄膜中,取代的Mn2 +离子使铁磁有序。在较高的氧空位浓度下,铁磁定序会变弱。 (C)2015年日本应用物理学会

著录项

  • 来源
    《Japanese journal of applied physics》 |2015年第6s1期|06FJ08.1-06FJ08.3|共3页
  • 作者单位

    Tokyo Univ Sci, Shinjuku Ku, Tokyo 1628601, Japan;

    Tokyo Univ Sci, Shinjuku Ku, Tokyo 1628601, Japan;

    Tokyo Univ Sci, Shinjuku Ku, Tokyo 1628601, Japan;

    Tokyo Univ Sci, Shinjuku Ku, Tokyo 1628601, Japan|Tianjin Univ Technol & Educ, Tianjin 300222, Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号