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Modelling the temperature dependence of the threshold voltage of bis(1,4-dithiolbenzene) molecular assembly system

机译:对双(1,4-二硫代苯)分子组装系统阈值电压的温度依赖性进行建模

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摘要

We present a new analytical model for the threshold voltage Vth of the molecular assembly system (MAS) made of bis(1,4-dithiolbenzene) in a parallel arrangement. The relationship between Vth and the temperature T associated with the intermolecular coupling effect is investigated under various geometrical MAS structures. The results show a linear relationship between Vth and T with an average slope of -0.0042 V/K and Y-intercept in the interval of 2.2584-3.4236 V described by polynomial regression of order 5. Vth decreases linearly by approximately 1.2 V when the temperature changes from 50 to 325 K. At constant temperature, when the intermolecular spacing d decreases from 6.9 to 3.3 angstrom, strengthening pi-orbital interactions further reduce the threshold voltage. This approach of modeling the temperature effects in a linear form significantly simplifies the model parameter extraction of MAS devices, which is an important and useful guideline for the design of future nanoscale devices. (C) 2015 The Japan Society of Applied Physics
机译:我们提出了一种新的分析模型,用于以双(1,4-二硫代苯)并联布置的分子组装系统(MAS)的阈值电压Vth。在各种几何MAS结构下,研究了Vth与温度T之间的关系以及分子间耦合效应。结果表明,Vth和T之间的线性关系为-0.0042 V / K,Y截距在2.2584-3.4236 V的区间内,由多项式5多项式回归描述。Vth与T呈线性关系,温度降低约1.2 V从50 K改变为325K。在恒定温度下,当分子间间距d从6.9降低到3.3埃时,加强pi轨道相互作用会进一步降低阈值电压。这种以线性形式对温度效应进行建模的方法极大地简化了MAS器件的模型参数提取,这对于设计未来的纳米级器件是重要而有用的指南。 (C)2015年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2015年第6s1期|06FG11.1-06FG11.6|共6页
  • 作者

    Boudjella Aissa;

  • 作者单位

    Al Khawarizmi Int Univ Coll, Dept Informat Technol, Abu Dhabi, U Arab Emirates|Bircham Int Univ, Madrid 28691, Spain;

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  • 正文语种 eng
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