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Current-induced domain wall motion in magnetic nanowires with various widths down to less than 20 nm

机译:电流诱导的畴壁运动在宽度小于20 nm的各种宽度的磁性纳米线上

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We experimentally and theoretically study the current-induced domain wall motion in magnetic nanowires with various widths, and discuss the issues concerning the domain wall motion in wires with reduced widths down to less than 20 nm. For Co/Ni nanowires, the threshold current density significantly increases as the width decreases below 30nm and the domain wall motion is not observed within the studied current density range for a number of devices with the wire width of around 20 nm. The relationship between the threshold current density and wire width is reasonably reproduced by a theoretical calculation based on the adiabatic spin-transfer torque model. The micromagnetic simulation suggests that high-anisotropy materials are promising for domain-wall-motion devices with wire widths beyond 20 nm. (C) 2016 The Japan Society of Applied Physics
机译:我们从实验和理论上研究了各种宽度的磁性纳米线中电流感应的畴壁运动,并讨论了宽度减小到小于20 nm的电线中的畴壁运动的问题。对于Co / Ni纳米线,阈值电流密度随着宽度减小到30nm以下而显着增加,并且对于许多线宽约为20 nm的器件,在研究的电流密度范围内未观察到畴壁运动。通过基于绝热自旋传递扭矩模型的理论计算,合理地再现了阈值电流密度和线宽之间的关系。微磁模拟表明,高各向异性材料有望用于线宽超过20 nm的畴壁运动设备。 (C)2016年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2016年第4s期|04EN01.1-04EN01.4|共4页
  • 作者单位

    Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 9808577, Japan|Tohoku Univ, Ctr Innovat Integrated Elect Syst, Sendai, Miyagi 9800845, Japan;

    Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan;

    Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 9808577, Japan|Tohoku Univ, Ctr Innovat Integrated Elect Syst, Sendai, Miyagi 9800845, Japan;

    Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 9808577, Japan|Tohoku Univ, Ctr Innovat Integrated Elect Syst, Sendai, Miyagi 9800845, Japan|Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan|Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan;

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