机译:通过具有多个陷阱相互作用的三维动力学蒙特卡洛模拟研究nMOSFET中高k /金属栅极的可靠性
Peking Univ, Inst Microelect, Beijing 100871, Peoples R China;
Peking Univ, Inst Microelect, Beijing 100871, Peoples R China;
Peking Univ, Inst Microelect, Beijing 100871, Peoples R China;
Peking Univ, Inst Microelect, Beijing 100871, Peoples R China;
Peking Univ, Inst Microelect, Beijing 100871, Peoples R China;
Peking Univ, Inst Microelect, Beijing 100871, Peoples R China;
Peking Univ, Inst Microelect, Beijing 100871, Peoples R China;
Peking Univ, Inst Microelect, Beijing 100871, Peoples R China;
Peking Univ, Inst Microelect, Beijing 100871, Peoples R China;
机译:高k /金属栅极NMOSFET中的沟道迁移率下降和电荷陷阱
机译:用kMC TDDB模拟研究TiN覆盖层对超薄EOT高k金属栅极NMOSFET随时间变化的介电击穿特性的影响
机译:在存在随机离散掺杂剂和随机界面陷阱的情况下,16nm栅极高k /金属栅极MOSFET的物理和电气特性波动的统计设备仿真
机译:带La掺杂HF硅酸盐栅极电介质的带边缘高k /金属栅极Nmosfet的性能和可靠性特性
机译:存在高κ栅极绝缘体的块状Si NMOSFET中的电子传输:电荷俘获和迁移率
机译:使用特定于患者的三维连续力学有限元残肢模型研究桩-窝相互作用的有效建模-仿真-分析工作流
机译:接口陷阱电荷对无线双金属栅极高k门的影响纳米线FET基于Alzheimer Biosensor