InGaAs/AlAs triple-barrier p-i-n junction diode for realizing superlattice-based FET for steep slope

摘要

The subthreshold slope of a conventional FET is over 60mV/dec at room temperature. One of the proposed devices capable of overcoming this limitation is a superlattice FET (SLFET). In this study, we determined the feasibility of an SLFET experimentally. To overcome the limitations of conventional FETs, we proposed a "leaned" superlattice structure for an FET. With the help of calculations, we fabricated InGaAs/AlAs triple-barrier p-i-n diodes instead of FETs. By using measurements recorded at room and low temperatures, we confirmed the change in slope at the expected bias through calculations. (C) 2016 The Japan Society of Applied Physics.