Effects of annealing on the electrical characteristics of GaAs/GaAs junctions by surface-activated bonding

摘要

The electrical properties of GaAs/GaAs junctions fabricated by surface-activated bonding (SAB) and annealing were examined on the basis of the charge neutral level model. The potential barrier height, the density of interface states, and the charge neutral level at GaAs/GaAs interfaces were estimated from the measured dependences of the electrical conductance of n-GaAs-GaAs and p-GaAs/p-GaAs junctions on ambient temperature. The barrier height and the density of interface states were lowered by increasing the annealing temperature to 400 degrees C, which suggested that the damage introduced during the SAB process was partly reduced. (C) 2016 The Japan Society of Applied Physics