Temperature and pulse duration effects on the growth of MgZnO via pulsed metal organic chemical vapor deposition

摘要

The effect of substrate temperature (T-S) and pulse duration (PD) on Mg incorporation, surface quality, and photoresponse properties of MgZnO films grown via PMOCVD were studied. Films grown at T-S ranging from 500 to 700 degrees C but at identical PDs had band gaps varying from 3.38 to 3.87 eV, corresponding to Mg content between x = 0.06 and 0.27. The film with Mg content of 0.27 was the smoothest and achieved at 630 degrees C-optimal TS. Additionally, pulse time effect was studied by growing films at the same T-S but different PDs. A film grown at PD of 12 s has incorporated similar to 40% higher Mg than one grown in a continuous mode (PD -> infinity), indicting the cruciallity of PMOCVD to realize high Mg film. The peak response spectra of photodetectors were also varied with T-S and PD, in accordance with Mg content in the films. (C) 2016 The Japan Society of Applied Physics