Steep subthreshold swing of pentacene-based organic field-effect transistor with nitrogen-doped LaB6 interfacial layer

摘要

A pentacene-based organic field-effect transistor (OFET) is necessary to work at a low operation voltage and a steep subthreshold swing. The subthreshold swing of pentacene-based OFET was markedly improved by introducing a nitrogen-doped LaB6 interfacial layer (N-doped LaB6 IL) although charge-injection-type hysteresis was observed in ID-VG characteristics. In this study, the thickness dependence of N-doped LaB6 IL for p-type pentacene-based OFET was investigated. A 1.2-2.7-nm-thick N-doped LaB6 IL was deposited on an SiO2 gate insulator by RF sputtering at an RF power of 20-30W. It was found that a 1.2-nm-thick N-doped LaB6 IL realized a steep subthreshold swing of 75mV/dec with a mobility of 0.26cm(2)/(V.s) for p-type pentacene-based OFET. (C) 2017 The Japan Society of Applied Physics