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首页> 外文期刊>Japanese journal of applied physics >Diamond-like carbon film preparation using a high-repetition nanosecond pulsed glow discharge plasma at gas pressure of 1 kPa generated by a SiC-MOSFET inverter power supply
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Diamond-like carbon film preparation using a high-repetition nanosecond pulsed glow discharge plasma at gas pressure of 1 kPa generated by a SiC-MOSFET inverter power supply

机译:使用SiC-MOSFET逆变器电源产生的气压为1 kPa的高重复纳秒脉冲辉光放电等离子体制备类金刚石碳膜

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摘要

A high-repetition nanosecond pulsed glow discharge plasma at a gas pressure of 1 kPa was generated using a SiC-MOSFET inverter power supply for diamond-like carbon (DLC) film preparation. At a high repetition frequency above 50 kHz, the period of the nanosecond voltage pulse became shorter than the decay time of the afterglow plasma, and many ions and radicals remained in the gap space. The deposition rate was 0.1 mu m/min, which was 5 times higher than that of a conventional plasma CVD process. An increase in hardness to 13GPa and a decrease in hydrogen content in the DLC film were confirmed by increasing the repetition frequency to 200 kHz. (C) 2017 The Japan Society of Applied Physics
机译:使用SiC-MOSFET逆变器电源制备类金刚石碳(DLC)膜,产生气压为1 kPa的高重复性纳秒脉冲辉光放电等离子体。在高于50 kHz的高重复频率下,纳秒电压脉冲的周期变得比余辉等离子体的衰减时间短,并且许多离子和自由基保留在间隙空间中。沉积速率为0.1μm/ min,比常规等离子体CVD工艺高5倍。通过将重复频率增加到200 kHz,可以确认DLC膜的硬度增加到13GPa,氢含量减少。 (C)2017日本应用物理学会

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