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首页> 外文期刊>Japanese journal of applied physics >Long annealing effect on spin Seebeck devices fabricated using Ce_xY_(3_x)Fe_5O_(12) deposited by metal-organic decomposition
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Long annealing effect on spin Seebeck devices fabricated using Ce_xY_(3_x)Fe_5O_(12) deposited by metal-organic decomposition

机译:对通过金属有机分解沉积的Ce_xY_(3_x)Fe_5O_(12)制造的自旋Seebeck器件的长退火效应

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摘要

The effects of Ce content and annealing temperature on the electromotive force produced by spin Seebeck devices fabricated using CexY(3-x)Fe(5)O(12) deposited by metal-organic decomposition was investigated. The Ce content was first varied (x = 0; 1; 2; 3) for a fixed annealing condition of 3 h at 900 degrees C. It was found that increasing the Ce content led to a decrease in electromotive force, which meant that x = 0 was the optimum Ce content. Next, the effect of annealing temperature was investigated for a Ce1Y2Fe5O12 film for an annealing time of 14 h. The highest electromotive force of 24.0 mu V/ 50 degrees C was obtained for a sample annealed for 14 h at 800 degrees C, although the X-ray diffraction peaks were weaker than those for a sample annealed for 14 h at 950 degrees C. (C) 2018 The Japan Society of Applied Physics.
机译:研究了Ce含量和退火温度对使用金属有机物分解沉积的CexY(3-x)Fe(5)O(12)制备的自旋Seebeck装置产生的电动势的影响。在900摄氏度下3小时的固定退火条件下,首先改变Ce含量(x = 0; 1; 2; 3)。发现增加Ce含量​​会导致电动势降低,这意味着x = 0是最佳的Ce含量。接下来,研究了退火温度对Ce1Y2Fe5O12薄膜退火时间为14 h的影响。尽管X射线衍射峰比950℃退火14 h的样品的X射线衍射峰弱,但对于800℃退火14 h的样品,获得的最高电动势为24.0μV / 50℃。 C)2018年日本应用物理学会。

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  • 来源
    《Japanese journal of applied physics 》 |2018年第4s期| 04FN06.1-04FN06.3| 共3页
  • 作者单位

    Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, Japan;

    Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, Japan;

    Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, Japan;

    Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, Japan;

    Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, Japan;

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