Investigation Of Metal-Organic Decomposed (MOD) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique

摘要

Metal-organic decomposed (MOD) Ce(h precursor has been spin coated onudn-type Si and n-type GaN substrates with thickness in the range of 45-90 nm. Prapenanda Ce02 yang disediakan dengan teknik penguraian organik logamudtelah diserakkan ke atas wafer Si dan GaN beljenis n dengan ketebalan dalamudIinkungan 45-90 run.