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Application of Dual-step Pulse Voltage to the Excitation Source for Improving the Depth Profiling in Glow Discharge Optical Emission Spectrometry

机译:双步脉冲电压在激发源上的应用以改善辉光放电光谱仪的深度谱

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摘要

An excitation source driven by pulsed discharge voltage of a two-step waveform, comprising a short higher-voltage pulse and a subsequent main pulse, is suggested for the depth profiling in glow discharge optical emission spectrometry (GD-OES). Pulsation of a DC voltage can be applied effectively for analysis of several specified samples, such as a ultra-thin layer to suppress the sputtering rate; however, it might worsen the in-depth resolution due to a decrease in the sputtering rate. The main reason for this degradation is that the switching-on period of the pulsed discharge may not follow the waveform of the timing pulse and then it is delayed and distorted, due to the capacity component of the plasma itself. In the dual-step pulse method, the first-step pulse would work as a trigger for start of the switching-on period, and thus the response of the resulting plasma could be less delayed even when the duty ratio becomes smaller. As a result, the sputtering conditions were suitable for the in-depth analysis with better interface resolution as well as larger information depth. Depth profiling of an electro-plated nickel layer on a steel substrate was carried out comparatively between a conventional single-step pulse and the dual-step pulse method, yielding better interface resolution by a factor of 1.5-2 with the sputtering rate to be 2-4 times reduced.
机译:提出了一种由两步波形的脉冲放电电压驱动的激励源,包括短的高电压脉冲和随后的主脉冲,用于辉光放电光发射光谱法(GD-OES)的深度剖析。可以有效地施加直流电压脉冲,以分析几个指定的样品,例如用于抑制溅射速率的超薄层。然而,由于溅射速率的降低,可能会降低深度分辨率。造成这种劣化的主要原因是,由于等离子体本身的容量成分,脉冲放电的接通时间可能不会跟随定时脉冲的波形,然后延迟并失真。在双步脉冲方法中,第一步脉冲将作为启动接通周期的触发器,因此即使占空比变小,所得到的等离子体的响应也可以较少延迟。结果,溅射条件适合于具有更好的界面分辨率以及更大的信息深度的深度分析。在传统的单步脉冲和双步脉冲方法之间比较地进行了钢基板上电镀镍层的深度轮廓分析,在溅射速率为2的情况下,界面分辨率提高了1.5-2倍-4倍减少。

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