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On the electrodeposition mechanism of Pb on copper substrate from a perchlorate solution studied by electrochemical quartz crystal microbalance

机译:电化学石英晶体微天平研究高氯酸盐溶液中铅在铜基底上的电沉积机理

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摘要

Electrodeposition mechanism of lead on polycrystalline copper from a perchlorate solution in the presence of chloride ions was investigated. Electrochemical quartz crystal microbalance data including frequency and resistance were simultaneously recorded with cyclic voltammograms and current transients. The change of frequency and resistance shows that a rigid bulk film forms at the potentials more negative than −0.52 V saturated calomel electrode (SCE), exhibiting the overpotential deposits of Pb (OPD). However, at the potentials ranging from −0.38 to −0.43 V SCE, a monolayer of lead as the underpotential deposit of Pb (UPD) is formed. The measured real mass of the OPD of Pb compared to the charge passed through the cell elucidates the formation of Pb (II). The magnitude of the applied overpotential has considerable effect on the growth of the OPD of lead. The Pb OPDs formed at the lower overpotentials (or applied potentials in a range of −0.54 to −0.58 V SCE) show slight positive deviation of the electrochemical equivalent (M) of Pb (II). We ascribe this evidence to the possible incorporation of adsorbed/alloyed elements like chlorine in the film composition. At the higher overpotentials (or applied potentials of negative than −0.58 V SCE), the ratio starts to decrease, mainly due to the hydrogen evolution associated with the possible morphology change of deposit. Our results also show that the nucleation and growth of Pb OPD can be described with the instantaneous mechanism based on Scharifker–Hills prediction with nondimensional plots.
机译:研究了氯离子在高氯酸盐溶液中铅在多晶铜上的电沉积机理。电化学石英晶体的微量天平数据(包括频率和电阻)与循环伏安图和电流瞬变同时记录。频率和电阻的变化表明,在比-0.52 V饱和甘汞电极(SCE)更负的电势下形成刚性块状膜,表现出Pb(OPD)的超电势沉积。但是,在-0.38至-0.43 V SCE的电位范围内,会形成单层铅作为Pb(UPD)的欠电位沉积物。与通过电池的电荷相比,测得的Pb OPD实际质量阐明了Pb(II)的形成。施加的超电势的大小对铅的OPD的生长有很大影响。在较低的超电势(或施加的电势在-0.54至-0.58 V SCE范围内)形成的Pb OPD显示出Pb(II)的电化学当量(M / n)略有正偏差。我们将此证据归因于可能在膜组合物中掺入了吸附/合金元素(如氯)。在较高的过电势下(或施加的负电势低于-0.58 V SCE的情况下),该比率开始降低,这主要是由于与析出物的可能形态变化相关的氢逸出。我们的结果还表明,可以基于基于无量纲图的Scharifker-Hills预测的瞬时机制来描述Pb OPD的形核和生长。

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    《Ionics》 |2011年第4期|p.331-337|共7页
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    Farzad Nasirpouri;

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