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Developing TEI-Aware Ultralow-Power SoC Platforms for IoT End Nodes

机译:为IOT结束节点开发Tei感知UltraLow-Power SoC平台

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Ranging from circuit-level characterization to designing a platform architecture, developing a design automation tool, and fabricating a System on Chip (SoC), this article deals with the entire development process for ultralow-power (ULP) SoCs for Internet-of-Things (IoT) end nodes. More precisely, this article first focuses on the unique characteristics of the ULP circuits, the temperature effect inversion (TEI), i.e., the delay of the ULP circuits decreases with increasing temperature. Existing TEI-aware low-power (TEI-LP) techniques have incredible potential to further reduce the power consumption of conventional ULP SoCs, but there is a critical limitation to be widely adopted in real SoCs. To address this limitation and realize the ULP SoCs that can fully benefit from the TEI-LP techniques, this article proposes a new TEI-inspired SoC platform (TIP) architecture. On top of that, taking into account that the highly complex, time consuming, and labor-intensive development process of these ULP SoCs may hinder their widespread use for IoT end nodes, this article presents a new electronic design automation tool to accelerate ULP SoC development, RISC-V express (RVX). Finally, by using the RVX, this article introduces a TIP prototyping chip fabricated in 28-nm FD-SOI technology. This chip demonstrates that power savings of up to 35% can be achieved by lowering the supply voltage from 0.54 to 0.48 V at 25 degrees C and 0.44 V at 80 degrees C while continuing to operate at a target 50-MHz clock frequency.
机译:从电路级别表征到设计平台架构,开发设计自动化工具,并在芯片(SOC)上制造系统,本文涉及超级电源(ULP)SOC的整个开发过程,用于互联网(IoT)结束节点。更确切地说,本文首先侧重于ULP电路的独特特性,温度效应反转(TEI),即ULP电路的延迟随温度的增加而降低。现有的TEI感知低功耗(TEI-LP)技术具有令人难以置信的电位,可以进一步降低传统ULP SOC的功耗,但是在真正的SOC中广泛采用了一个关键限制。为了解决这些限制并实现可以完全受益于TEI-LP技术的ULP SoC,本文提出了一种新的TEI启发SOC平台(TIP)架构。在此之上,考虑到这些ULP SoC的高度复杂,耗时和劳动密集型开发过程可能会阻碍其广泛使用的IOT结束节点,这篇文章介绍了一个新的电子设计自动化工具,可以加速ULP SoC开发,RISC-V Express(RVX)。最后,通过使用RVX,本文介绍了在28-NM FD-SOI技术中制造的尖端原型芯片。该芯片表明,通过在80度C和0.44V下将电源电压降低0.54至0.48V,在80摄氏度下的电源电压下,可以在80℃下继续以目标50-MHz时钟频率运行来实现高达35%的功率节省。

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